Imaging performance of a CaWO4/CMOS sensor

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Published September 2, 2019
DOI: https://doi.org/10.3221/IGF-ESIS.50.39

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Niki Martini University of West Attica image/svg+xml https://orcid.org/0000-0002-9525-2010 Vaia Koukou University of West Attica image/svg+xml https://orcid.org/0000-0003-1722-744X George Fountos University of West Attica image/svg+xml Ioannis Valais University of West Attica image/svg+xml https://orcid.org/0000-0001-6808-0252 Ioannis Kandarakis University of West Attica image/svg+xml Christos Michail University of West Attica image/svg+xml https://orcid.org/0000-0001-5863-8013 Athanasios Bakas University of West Attica image/svg+xml Eleftherios Lavdas University of West Attica image/svg+xml Konstantinos Ninos University of West Attica image/svg+xml https://orcid.org/0000-0001-5933-0133 Georgia Oikonomou University of West Attica image/svg+xml Lida Gogou University of West Attica image/svg+xml George Panayiotakis Department of Medical Physics, Faculty of Medicine, University of Patras

Abstract

The aim of this study was to investigate the modulation transfer function (MTF) and the effective gain transfer function (eGTF) of a non-destruc­­tive testing (NDT)/industrial inspection complementary metal oxide semi­conductor (CMOS) sensor in conjunction with a thin calcium tungstate (CaWO4) screen. Thin screen samples, with dimensions of 2.7x3.6 cm2 and thick­ness of 118.9 μm, estimated from scanning electron microscopy-SEM im­ages, were extracted from an Agfa Curix universal screen and coupled to the active area of an active pixel (APS) CMOS sensor. MTF was assessed using the slanted-edge method, following the IEC 62220-1-1:2015 method. MTF values were found high across the examined spatial frequency range. eGTF was found maximum when CaWO4 was combined with charge-coupled devices (CCD) of broadband anti-reflection (AR) coating (17.52 at 0 cycles/mm). The com­bi­nation of the thin CaWO4 screen with the CMOS sensor provided very pro­mis­ing image resolution and adequate efficiency properties, thus could be also con­sidered for use in CMOS based X-ray imaging devices, for various applications.

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Issue
Vol 13 No 50 (2019): October 2019
Section
SI: Research activities of the Greek Society of Experimental Mechanics of Materi

How to Cite

Imaging performance of a CaWO4/CMOS sensor. (2019). Fracture and Structural Integrity, 13(50), 471-480. https://doi.org/10.3221/IGF-ESIS.50.39

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How to Cite

Imaging performance of a CaWO4/CMOS sensor. (2019). Fracture and Structural Integrity, 13(50), 471-480. https://doi.org/10.3221/IGF-ESIS.50.39